非晶矽薄膜電晶體光漏電流與電性物理機制之研究

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在TFT導通時,電荷會經由TFT儲存於液晶電容及輔助電容中,在TFT關閉後利用上述兩 ... 因電容的電壓必須維持定值至少1/30秒,光漏電流過大會造成TFT在關閉時仍有通道讓 ... 資料載入處理中... 跳到主要內容 臺灣博碩士論文加值系統 ::: 網站導覽| 首頁| 關於本站| 聯絡我們| 國圖首頁| 常見問題| 操作說明 English |FB專頁 |Mobile 免費會員 登入| 註冊 功能切換導覽列 (167.99.71.17)您好!臺灣時間:2022/05/0615:38 字體大小:       ::: 詳目顯示 recordfocus 第1筆/ 共1筆  /1頁 論文基本資料 摘要 外文摘要 目次 參考文獻 電子全文 紙本論文 QRCode 本論文永久網址: 複製永久網址Twitter研究生:楊伯鈞研究生(外文):Po-ChengYang論文名稱:非晶矽薄膜電晶體光漏電流與電性物理機制之研究論文名稱(外文):InvestigationonPhotoLeakageCurrentandElectricalMechanismofa-SiThinFilmTransistor指導教授:張鼎張學位類別:碩士校院名稱:國立中山大學系所名稱:物理學系研究所學門:自然科學學門學類:物理學類論文種類:學術論文論文出版年:2006畢業學年度:94語文別:英文論文頁數:94中文關鍵詞:光漏電流、薄膜電晶體外文關鍵詞:photoleakagecurrent、thinfilmtransistor相關次數: 被引用:1點閱:560評分:下載:102書目收藏:2 拜科技之賜,顯示器由傳統的陰極射線管CRT進步到液晶顯示器LCD,非晶矽薄膜電晶體極多晶矽薄膜電晶體已經用於製造液晶顯示器的畫素開關,尤其是非晶矽薄膜電晶體更是已經大量用於製造大面積的顯示面板。

在製作a-SiTFT的主動層時,有兩個主要改進的目標:增加其場效mobility及降低其在背光源照射下的漏電流;增加其場效mobility是為了用於大面積高解析度的面板,另外一方面因為a-Si的光導係數較高因此在光照射下會有較大的漏電流,當面板應用於須以強背光照射的產品如多媒體顯示器、液晶電視時光漏電流就會造成顏色顯示上的問題。

在TFT導通時,電荷會經由TFT儲存於液晶電容及輔助電容中,在TFT關閉後利用上述兩個電容所產生的電壓使液晶轉動,因為電視每秒顯示30張畫面,因電容的電壓必須維持定值至少1/30秒,光漏電流過大會造成TFT在關閉時仍有通道讓電荷通過,電容中的電荷就會由此通道流失,所提供的電壓就會減少,造成液晶旋轉的角度不足,所顯示的顏色不準確。

鑑於此,本論文將研究薄膜電晶體在背光源照射下,所產生的電性變化,探討在製作主動層時通入不同流量的SiF4是否會對光漏電流有所影響。

發現主動層製程中通入了SiF4,造成了主動層偏P型半導體及增加了主動層的缺陷密度,因此對光漏電流的抑制效果也越好。

Thehydrogenatedamorphoussiliconthin-filmtransistors(a-Si:HTFTs)havebeenwidelyusedasswitchingdeviceforlarge-areaelectronicssuchasactivematrixliquidcrystaldisplays(AM-LCDs).a-SiTFTisparticularlyadvantageoustotheproductionoflargescreendisplaysandfacilitatesmassproduction.Whenemployingana-Si:Hlayer,themainobjectivesaretoenhancethefieldeffectmobilityandtoreducetheoff-statecurrentunderlightillumination.Theincreaseoffieldeffectmobilityresultsinwideapplicationofa-Si:HTFTsinhighresolutionLCDs.Ontheotherhand,a-Si:Hhashighphotoconductivitywhichresultsinhighoff-statecurrentofa-Si:HTFTunderlightillumination.Theoff-stateleakagecurrentunderlightilluminationis,inparticular,aseriousproblemintheprojectionand/ormultimediadisplaysthatrequirehighintensitybacklightillumination.Minimizingtheoff-currentincreasebya-Siphotosensitivityisanimportantdesignconsiderationforachievinghighimage-qualityLCDs.TFToff-currentincreasebyphotoilluminationofa-SidecreasesthechargestoredonthepixelduringtheTFToff-time,andresultsingray-scaleshading,flicker,crosstalkandotherdisplaynonuniformityintheLCD.Thefluorineincorporatedamorphoussilicon[a-Si:H(:F)]andamorphoussilicon(a-Si:H)wereilluminatedwithbacklighttoinvestigateelectricalcharacteristics.Theeffectofdifferent[SiF4]/[SiH4]ratioontheperformanceofa-Si:H(:F)TFTswasalsostudied.Wefoundthedensityofstatesinthegapofa-Si:H(:F)willbemodifiedbytheintroductionofFintoa-Si:HandresultingtheshiftoftheFermileveltowardthevalencebandedge.Thedensity-of-statesincreasingcausemorerecombinationcentersforelectronsandholestoincreasethecarrierrecombinationrate.TheshiftintheFermilevelleadstoareductionofthephotoconductivityofa-Si:H(:F).Duetothesetwoimportantfactor,thephotoleakagecurrentdecreases. ChineseAbstract……………………………………………iEnglishAbstract……………………………………………iiiChineseAcknowledgment……………………………………vContent……………………………………………………viiTableCaptions………………………………………………xFigureCaptions……………………………………………xiChapterOne-Introduction1.1Introduction………………………………………………………11.1.1Introduction………………………………………………11.1.2HydrogenatedAmorphousSilicon…………………………11.1.3AtomicStructureandtheElectronDensityofStates…21.2Photoleakagecurrentmechanism………………………51.3Somesolutionsforreducingphotoleakagecurrent………9ChapterTwo-Fabrication2.1DepositionofHydrogenatedAmorphousSiliconbyPECVD………………………………………………………112.2DepositionofSiNxbyPECVD…………………………………142.3Depositionofn+HydrogenatedAmorphousSiliconbyPECVD………………………………………………………162.4ProcessFlow……………………………………………………17ChapterThree-ApparatusandParameters3.1Apparatus………………………………………………………183.2SetupinstrumentsforI-V……………………………………193.3MethodofDeviceParameterExtraction……………………203.3.1Determinationofthethresholdvoltage………………213.3.2Determinationofthesubthresholdswing………………213.3.3Determinationofthefield-effectmobility……………213.4DensityofStates………………………………………………22ChapterFour–BacklightIlluminatedexperiment4.1Introduction……………………………………………………244.2Motivation………………………………………………………254.3Experiments……………………………………………………264.4Electricalcharacteristicunderbacklightillumination……274.5Conclusion………………………………………………………31ChapterFive-ActivationEnergyMeasurementexperiment5.1Introduction……………………………………………………325.2Motivation………………………………………………………335.3Experiments……………………………………………………345.4ResultsandDiscussion…………………………………………355.5Conclusion………………………………………………………39ChapterSix-DoubleLayerStructureMeasurement5.1Introduction……………………………………………………405.2Motivation………………………………………………………415.3Experiments……………………………………………………425.4ResultsandDiscussion…………………………………………435.5Conclusion………………………………………………………45References…………………………………………………46Tables………………………………………………………55Figures……………………………………………………57 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